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• Concurrent Characterization of Surface Diffusion and Intermixing of Ge on Si: A Classical Molecular Dynamics Study
  L. Martín-Encinar, L.A. Marqués, I. Santos, P. López, and L. Pelaz
  Advanced Theory and Simulations 6, 2200848 (2023)
• Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study
  P. López, M. Aboy, I. Santos, L.A. Marqués, M. Ullán, and L. Pelaz
  Acta Materialia 241, 118375 (2022)
• Rapid thermal process driven intra-die device variations
  C. H. Tsai, M. Aboy, L. Pelaz, Y. H. Hsu, W. Y. Woon, P. J. Timans, and C. K. Lee
  Materials Science in Semiconductor Processing 152, 107052 (2022)
• Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit
  C.-H. Tsai, C.P. Savant, M.J. Asadi, Y.-M. Lin, I. Santos, Y.-H. Hsu, J. Kowalski, L. Pelaz, W.-Y. Woon, C.-K. Lee, and J.C.M. Hwang
  Applied Physics Letters 121, 052103 (2022)
• Extending defect models for Si processing: the role of energy barriers for defect transformation, entropy and coalescence mechanism
  I. Santos, A. Caballo, M. Aboy, L.A. Marqués, P. López, and L. Pelaz
  Nuclear Instruments and Methods in Physics Research B 512, 54 (2022)
• Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons
  P. López, M. Aboy, I. Muñoz, I. Santos, L.A. Marqués, P. Fernández-Martínez, M. Ullán, and L. Pelaz
  Nuclear Instruments and Methods in Physics Research B 512, 42 (2022)
• Atomistic modeling of laser-related phenomena
  L. A. Marqués, M. Aboy, P. López, I. Santos, L. Pelaz, and G. Fisicaro.
  Book chapter in "Laser Annealing Processes in Semiconductor Technology", Editors Fuccio Cristiano and Antonino La Magna (Woodhead Publishing, 2021) ISBN: 978-0-12-820255-5)
• Achieving junction stability in heavily doped epitaxial Si:P
  C. H. Tsai, Y. H. Hsu, I. Santos, L. Pelaz, J. E. Kowalski, J. W. Liou, W. Y. Woon, and C. K. Lee.
  Materials Science in Semiconductor Processing 127, 105672 (2021)
• {001} loops in silicon unraveled
  L. A. Marqués, M. Aboy, M. Ruiz, I. Santos, P. López, and L. Pelaz.
  Acta Materialia 166, 192 (2019)
• Generation of amorphous Si structurally compatible with experimental samples through the quenching process: a systematic molecular dynamics simulation study
  I. Santos, M. Aboy, L. A. Marqués, P. López, and L. Pelaz.
  Journal of Non-Crystalline Solids 503-504, 20 (2019)
• On the anomalous generation of {001} loops during laser annealing of ion-implanted silicon
  L. A. Marqués, M. Aboy, I. Santos, P. López, F. Cristiano, A. La Magna, K. Huet, T. Tabata, L. Pelaz.
  Nuclear Instruments and Methods in Physics Research B 458, 179 (2019)
• I_ON degradation in Si devices in harsh radiation environments: modeling of damage-dopant interactions
  P. López, M. Aboy, I. Muñoz, I. Santos, L. A. Maqués, C. Couso, M. Ullán, L. Pelaz.
  2018 Spanish Conference on Electron Devices (CDE), Salamanca, 2018, pp. 1-4
• Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential
  L. Martín, I. Santos, P. López, L. A. Marqués, M. Aboy, and L. Pelaz.
  2018 Spanish Conference on Electron Devices (CDE), Salamanca, 2018, pp. 1-4
• W and X photoluminescence centers in crystalline Si: chasing candidates at atomic level through multiscale simulations
  M. Aboy, I. Santos, P. López, L. A. Marqués, and L. Pelaz.
  Journal of Electronic Materials 47, 5045 (2018)
• Identification of Extended Defect Atomic Configurations in Silicon through Transmission Electron Microscopy Image Simulation
  I. Santos, M. Ruiz, M. Aboy, L. A. Marqués, P. López and L. Pelaz.
  Journal of Electronic Materials 47, 4955 (2018)
• Ultra-fast generation of unconventional {001} loops in Si
  L. A. Marqués, M. Aboy, I. Santos, P. López, F. Cristiano, A. La Magna, K. Huet, T. Tabata, and L. Pelaz.
  Physical Review Letters 119, 205503 (2017)
• Improved physical models for advanced silicon device processing
  L. Pelaz, L. A. Marqués, M. Aboy, P. López and I. Santos.
  Materials Science in Semiconductor Processing 62, 62 (2017)
• Characterization of amorphous Si generated through classical molecular dynamics simulations
  I. Santos, P. López, M. Aboy, L. A. Marqués, L. Pelaz.
  2017 Spanish Conference on Electron Devices (CDE), Barcelona, 2017, pp. 1-4
• Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique
  P. López, D. Calvo, I. Santos, M. Aboy, L. A. Marqués, M. Trochet, N. Mousseau and L. Pelaz.
  2017 Spanish Conference on Electron Devices (CDE), Barcelona, 2017, pp. 1-4
• Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion
  I. Santos, M. Aboy, L. A. Marqués, P. López, M. Ruiz, L. Pelaz, A. M. Hernández-Díaz, P. Castrillo.
  2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, 2016, pp. 35-37
• Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations
  I. Santos, M. Aboy, P. López, L. A. Marqués and L. Pelaz.
  Journal of Physics D: Applied Physics 49, 075109 (2016)
• Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon
  L. A. Marqués, I. Santos, L. Pelaz, P. López and M. Aboy.
  Materials Science in Semiconductor Processing 42, 235 (2016)
• Atomistic modeling of ion implantation technologies in silicon
  L. A. Marqués, I. Santos, L. Pelaz, P. López and M. Aboy.
  Nuclear Instruments and Methods in Physics Research B 352, 148 (2015)
• A detailed approach for the classification and statistical analysis of irradiation induced defects
  P. López, I. Santos, M. Aboy, L. A. Marqués and L. Pelaz.
  Nuclear Instruments and Methods in Physics Research B 352, 156 (2015)
• Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
  L. A. Marqués, M. Aboy, K. J. Dudeck, G. A. Botton, A. P. Knights and R. M. Gwilliam.
  Journal of Applied Physics 115, 143514 (2014)
• Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces
  I. Santos, M. Cazzaniga, G. Onida and L. Colombo.
  Journal of Physics: Condensed Matter 26, 095001 (2014)
• Modeling of defects, dopant diffusion and clustering in silicon
  M. Aboy, I. Santos, L. Pelaz, L. A. Marqués and P. López.
  Journal of Computational Electronics 13, 40 (2014)
• Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
  G. Fisicaro, L. Pelaz, M. Aboy, P Lopez, et al.
  Applied Physics Express 7, 021301 (2014)
• Sub-ångstrom experimental validation of molecular dynamics for predictive modeling of extended defect structures in Si
  K. J. Dudeck, L. A. Marqués, A. P. Knights, R. M. Gwilliam and G. A. Botton.
  Physical Review Letters 110, 166102 (2013)
• Codiffusion of phosphorus and carbon in preamorphized ultrashallow junctions
  Y. T. Ling, M. J. Huang, R. D. Chang and L. Pelaz.
  Electrochemical and Solid-State Letters, 15 (6) H202-H204 (2012)
• Molecular dynamics simulation of the regrowth of nanometric multigate Si devices
  L. A. Marqués, L. Pelaz, I. Santos, P. López and R. Duffy.
  Journal of Applied Physics 111, 034302 (2012)
• Molecular dynamics simulations of damage production by thermal spikes in Ge
  P. López, L. Pelaz, I. Santos, L. A. Marqués and M. Aboy.
  Journal of Applied Physics 111, 033519 (2012)
• Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon
  G. Fisicaro, L. Pelaz, P. Lopez and A. La Magna.
  Physical Review E 86, 036705 (2012)
• Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study
  I. Santos, L. A. Marqués, L. Pelaz, P. López and M. Aboy.
  AIP Conference Proceedings 1496, 229 (2012)
• Kinetics of large B clusters in crystalline and preamorphized silicon
  M. Aboy, L. Pelaz, E. Bruno, S. Mirabella and S. Boninelli.
  Journal of Applied Physics 110, 073524 (2011)
• The curious case of thin-body Ge crystallization
  R. Duffy, M. Shayesteh, B. McCarthy, A. Blake, M. White, J. Scully, R. Yu, A.-M. Kelleher, M. Schmidt, N. Petkov, L. Pelaz and L. A. Marqués.
  Applied Physics Letters 99, 131901 (2011)
• Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing
  I. Santos, L. Pelaz, L. A. Marqués and L. Colombo.
  Physical Review B 83, 153201 (2011)
• Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
  L. Pelaz, L. A. Marqués, M. Aboy, I. Santos, P. López and R. Duffy.
  The Journal of Vacuum Science and Technology B 28, C1A1-C1A6 (2010)
• Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency
  I. Santos, P. Castrillo, W. Windl, D. A. Drabold, L. Pelaz and L. A. Marqués.
  Physical Review B 81, 033203 (2010)
• Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions
  M. Aboy, L. Pelaz, P. Lopez, E. Bruno and S. Mirabella.
  International Journal of Numerical Modeling - Electronic Networks, Devices and Fields 23, 266 (2010)
• Front-end process modeling in silicon
  L. Pelaz, L. A. Marqués, M. Aboy, P. López and I. Santos.
  The European Physical Journal B 72, 323 (2009)
• Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices
  L. Pelaz, L. A. Marqués, M. Aboy, P. López, I. Santos and R. Duffy.
  IEEE International Electron Device Meeting (IEDM 2009), 513 (2009)
• Improved atomistic damage generation model for binary collision simulations
  I. Santos, L. A. Marqués, L. Pelaz and P. López.
  Journal of Applied Physics 105, 083530 (2009)
• Evolution of fluorine and boron profiles during annealing in crystalline Si
  Pedro López, Lourdes Pelaz, Ray Duffy, P. Meunier-Beillard, F. Roozeboom, K. van der Tak, P. Breimer, J. G. M. van Berkum, M. A. Verheijen and M. Kaiser.
  Journal of Vacuum Science & Technology B 26, 377 (2008)
• Structural transformations from point to extended defects in silicon: A molecular dynamics study
  L. A. Marqués, L. Pelaz, I. Santos, P. López and M. Aboy.
  Physical Review B 78, 193201 (2008)
• Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
  L. Pelaz, R. Duffy, M. Aboy, Marques L, P. López, I. Santos, B. J. Pawlak, M. J. H. van Dal, et al.
  IEEE International Electron Device Meeting (IEDM 2008), 535 (2008)
• F+ implants in crystalline Si: The Si interstitial contribution
  P. López, L. Pelaz, R. Duffy, P. Meunier-Beillard, F. Roozeboom, K. van der Tak, P. Breimer, et al.
  MRS Symp. Proc. 1070, 1070-E06-07 (2008)
• Atomistic simulation techniques in front-end processing
  L. A. Marqués, L. Pelaz, I. Santos, P. López and M. Aboy.
  MRS Symp. Proc. 1070, 1070-E06-01 (2008)
• First principles study of boron in amorphous silicon
  I. Santos, W. Windl, L. Pelaz and L. A. Marqués.
  MRS Symp. Proc. 1070, 1070-E05-07 (2008)
• Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation
  I. Santos, L. A. Marqués, L. Pelaz, P. López and M. Aboy.
  Solid State Phenomena 139, 71 (2008)
• Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects
  M. Aboy, L. Pelaz, P. López, E. Bruno, S. Mirabella and E. Napolitani.
  Materials Science and Engineering B 154-155, 247 (2008)
• Atomistic modeling of FnVm complexes in pre-amorphized Si
  P. López, L. Pelaz, M. Aboy, G. Impellizeri, S. Mirabella, F. Priolo and E. Napolitani.
  Materials Science and Engineering B 154-155, 207 (2008)
• Si interstitial contribution of F+ implants in crystalline Si
  P. López, L. Pelaz, R. Duffy, et al.
  Journal of Applied Physics 103, 093538 (2008)
• Atomistic analysis of the annealing behavior of amorphous regions in silicon
  P. López, L. Pelaz, L. A. Marqués and I. Santos.
  Journal of Applied Physics 101, 093518 (2007)
• Boron diffusion and activation in SOI and bulk Si: The role of the buried interface
  M. Aboy, L. Pelaz, J. Montserrat, F. J. Bermudez and J. J. Hamilton.
  Nuclear Instruments & Methods In Physics Research Section B 257, 152 (2007)
• Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects
  L. A. Marqués, L. Pelaz, P. López, I. Santos and M. Aboy.
  Physical Review B 76, 153201 (2007)
• Molecular dynamics modeling of octadecaborane implantation into Si
  L. A. Marqués, L. Pelaz, I. Santos, P. López and M. Aboy.
  Simulation of Semiconductor Processes and Devices 2007, 17 (2007)
• Molecular dynamics study of B18H22 cluster implantation into silicon
  L. A. Marqués, L. Pelaz and I. Santos.
  Nuclear Instruments & Methods In Physics Research Section B 255, 242 (2007)
• Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models
  I. Santos, L. A. Marqués, L. Pelaz and P. López.
  Nuclear Instruments & Methods In Physics Research Section B 255, 110 (2007)
• Multiscale modeling of radiation damage and annealing in Si
  L. Pelaz, L. A. Marqués, P. López, I. Santos and M. Aboy.
  Nuclear Instruments & Methods In Physics Research Section B 255, 95 (2007)
• Characterization of octadecaborane implantation into Si using molecular dynamics
  L. A. Marqués, L. Pelaz, I. Santos and V. C. Venezia.
  Physical Review B 74, 201201 (2006)
• Modeling of damage generation mechanisms in silicon at energies below the displacement threshold
  I. Santos, L. A. Marqués and L. Pelaz.
  Physical Review B 74, 174115 (2006)
• Fluorine profile distortion upon annealing by the presence of a CVD grown boron box
  P. López, L. Pelaz, R. Duffy, P. Meunier-Beillard, K. van der Tak, F. Roozeboom and G. Maas.
  AIP Conference Proceedings 866, 29 (2006)
• Physical insight into ultra-shallow junction formation through atomistic modeling
  L. Pelaz, M. Aboy, P. López, I. Santos and L. A. Marqués.
  Nuclear Instruments & Methods In Physics Research Section B 253, 41 (2006)
• Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
  M. Aboy, L. Pelaz, P. López, L. A. Marqués, R. Duffy and V. C. Venezia.
  Applied Physics Letters 88, 191917 (2006)
• Atomistic modeling of dopant implantation, diffusion, and activation
  L. Pelaz, M. Aboy, P. López and L. A. Marqués.
  The Journal of Vacuum Science & Technology B 24, 2432 (2006)
• Boron pocket and channel deactivation in nMOS transistors with SPER junctions
  R. Duffy, M. Aboy, V. C. Venezia, L. Pelaz, et al.
  IEEE Transactions on Electron Devices 53, 71 (2006)
• Role of silicon interstitials in boron cluster dissolution
  M. Aboy, L. Pelaz, L. A. Marqués, P. López, J. Barbolla, R. Duffy, V. C. Venezia and P. B. Griffin.
  Applied Physics Letters 86, 031908 (2005)
• Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
  M. Aboy, L. Pelaz, L. A. Marqués, P. López, J. Barbolla and R. Duffy.
  Journal of Applied Physics 97, 103520 (2005)
• Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial
  L. A. Marqués, L. Pelaz, P. Castrillo and J. Barbolla.
  Physical Review B 71, 085204 (2005)
• A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework
  L. A. Marqués, L. Pelaz, M. Aboy, P. López and J. Barbolla.
  Computational Materials Science 33, 112 (2005)
• Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation
  L. Pelaz, L. A. Marqués, M. Aboy, P. López and J. Barbolla.
  Computational Materials Science 33, 92 (2005)
• Atomistic modeling of ion beam induced amorphization in silicon
  L. Pelaz, L. A. Marqués, P. López, I. Santos, M. Aboy and J. Barbolla.
  Nuclear Instruments & Methods In Physics Research Section B 241, 501 (2005)
• Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon
  J. M. Hernandez-Mangas, J. Arias, L. A. Marques, A. Ruiz-Bueno and L. Bailon.
  Nuclear Instruments & Methods In Physics Research Section B 228, 235 (2005)
• Amorphous layer depth dependence on implant parameters during Si self-implantation
  P. López, L. Pelaz, L. A. Marqués, J. Barbolla, H. J. Gossmann, A. Agarwal, K. Kimura and T. Matsushita.
  Materials Science and Engineering B 124–125, 379 (2005)
• Molecular dynamics characterization of as-implanted damage in silicon
  I. Santos, L. A. Marqués, L. Pelaz, P. López, M. Aboy and J. Barbolla.
  Materials Science and Engineering B 124–125, 372 (2005)
• Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth
  M. Aboy, L. Pelaz, J. Barbolla, R. Duffy and V. C. Venezia.
  Materials Science and Engineering B 124–125, 205 (2005)
• Atomistic simulations in Si processing: Bridging the gap between atoms and experiments
  L. A. Marqués, L. Pelaz, P. López, M. Aboy, I. Santos and J. Barbolla.
  Materials Science and Engineering B 124–125, 72 (2005)
• Atomistic analysis of the ion beam induced defect evolution
  M. Aboy, L. Pelaz, L. A. Marqués and J. Barbolla.
  Nuclear Instruments & Methods In Physics Research Section B 216, 100 (2004)
• The laser annealing induced phase transition in silicon: a molecular dynamics study
  L. A. Marqués, L. Pelaz, M. Aboy and J. Barbolla.
  Nuclear Instruments & Methods In Physics Research Section B 216, 57 (2004)
• Atomistic modeling of ion beam induced amorphization in silicon
  L. Pelaz, L. A. Marqués, M. Aboy and J. Barbolla.
  Nuclear Instruments & Methods In Physics Research Section B 216, 41 (2004)
• The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles
  M. Aboy, L. Pelaz, L. A. Marqués, P. López, J. Barbolla, V. C. Venezia, R. Duffy and P. B. Griffin.
  Materials Science and Engineering B 114-115, 193 (2004)
• Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants
  P. López, L. Pelaz, L. A. Marqués, I. Santos, M. Aboy and J. Barbolla.
  Materials Science and Engineering B 114-115, 82 (2004)
• Ion-beam-induced amorphization and recrystallization in silicon
  L. Pelaz, L. A. Marqués and J. Barbolla.
  Journal of Applied Physics 96, 5947 (2004)
• Atomistic modeling of ion beam induced defects in Si: From point defects to continuous Amorphous Layers
  L. Pelaz, L. A. Marqués, P. López, I. Santos, M. Aboy and J. Barbolla.
  MRS Symp. Proc. 810, C10.1 (2004)
• Atomistic analysis of the role of silicon interstitials in boron cluster dissolution
  M. Aboy, L. Pelaz, L. A. Marqués, P. López and J. Barbolla.
  MRS Symp. Proc. 810, C7.3 (2004)
• Microscopic description of the irradiation-induced amorphization in silicon
  L. A. Marqués, L. Pelaz, M. Aboy, L. Enríquez and J. Barbolla.
  Physical Review Letters 91, 135504 (2003)
• The role of the bond defect on silicon amorphization: a molecular dynamics study
  L. A. Marqués, L. Pelaz, M. Aboy, J. Vicente and J. Barbolla.
  Computational Materials Science 27, 6 (2003)
• Monte Carlo modeling of amorphization resulting from ion implantation in Si
  L. Pelaz, L. A. Marqués, M. Aboy, G. H. Gilmer, L. A. Bailón and J. Barbolla.
  Computational Materials Science 27, 1 (2003)
• Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles
  M. Aboy, L. Pelaz, L. A. Marqués, J. Barbolla, A. Mokhberi, Y. Takamura, P. B. Griffin and J. D. Plummer.
  Applied Physics Letters 83, 4166 (2003)
• Atomistic modeling of amorphization and recrystallization in silicon
  L. Pelaz, L. A. Marqués, M. Aboy, J. Barbolla and G. H. Gilmer.
  Applied Physics Letters 82, 2038 (2003)
• Atomistic analysis of defect evolution and transient enhanced diffusion in silicon
  M. Aboy, L. Pelaz, L. A. Marqués, L. Enríquez and J. Barbolla.
  Journal of Applied Physics 94, 1013 (2003)
• Stability of defects in crystalline silicon and their role in amorphization
  L. A. Marqués, L. Pelaz, J. Hernández-Mangas, J. Barbolla and G. H. Gilmer.
  Physical Review B 64, 045214 (2001)
• Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si
  L. Pelaz, L. A. Marqués, G. H. Gilmer, M. Jaraiz and J. Barbolla.
  Nuclear Instruments & Methods In Physics Research Section B 180, 12 (2001)
• Atomistic modeling of complex silicon processing scenarios
  M. Jaraiz, P. Castrillo, R. Pinacho, L. Pelaz, J. Barbolla, G. H. Gilmer and C. S. Rafferty.
  MRS Symp. Proc. 610, B11.1 (2001)
• Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data
  M. Jaraiz, J.E. Rubio, P. Castrillo, L. Pelaz, L. Bailon, J. Barbolla, G. H. Gilmer and C. S. Rafferty.
  Materials Science in Semiconductor Processing 3, 59 (2000)
• Boron pileup and clustering in silicon-on-insulator films
  H. H. Vuong, H. J. Gossmann, L. Pelaz, et al.
  Applied Physics Letters 75, 1083 (1999)
• Activation and deactivation of implanted B in Si
  L. Pelaz, V. C. Venezia, H. J. Gossmann, G. H. Gilmer, A. T. Fiory, C. S. Rafferty, M. Jaraiz and J. Barbolla.
  Applied Physics Letters 75, 662 (1999)
• B cluster formation and dissolution in Si: A scenario based on atomistic modeling
  L. Pelaz, G. H. Gilmer, H. J. Gossmann, C. S. Rafferty, M. Jaraiz and J. Barbolla.
  Applied Physics Letters 74, 3657 (1999)
• Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
  L. Pelaz, G. H. Gilmer, V. C. Venezia, H. J. Gossmann, M. Jaraiz and J. Barbolla.
  Applied Physics Letters 74, 2017 (1999)
• Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model
  L. Pelaz, G. H. Gilmer, M. Jaraiz, S. B. Herner, H. J. Gossmann, D. J. Eaglesham, G. Hobller, C. S. Rafferty and J. Barbolla.
  Applied Physics Letters 73, 1421 (1998)
• Atomistic modeling of point and extended defects in crystalline materials
  M. Jaraiz, L. Pelaz, J. E. Rubio, J. Barbolla, G. H. Gilmer, D. J. Eaglesham, H. J. Gossmann and J. M. Poate.
  MRS Symp. Proc. 532, 43 (1998)
• B diffusion and clustering in ion implanted Si: The role of B cluster precursors
  L. Pelaz, M. Jaraiz, G. H. Gilmer, H. J. Gossmann, C. S. Rafferty, D. J. Eaglesham and J. M. Poate.
  Applied Physics Letters 70, 2285 (1997)
• Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation
  L. A. Marqués, J. E. Rubio, M. Jaraiz, L. A. Bailón and J. Barbolla.
  Journal of Applied Physics 81, 1488 (1997)
• Molecular dynamics simulations of ion bombardment processes
  L. A. Marqués, M. Jaraiz, J. E. Rubio, J. Vicente, L. A. Bailón and J. Barbolla.
  Materials Science and Technology 13, 893 (1997)
• Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study
  L. A. Marqués, M. J. Caturla, T. Diaz de la Rubia and G. H. Gilmer.
  Journal of Applied Physics 80, 6160 (1996)
• Ion-beam processing of silicon at keV energies: a molecular-dynamics study
  M. J. Caturla, T. Diaz de la Rubia, L. A. Marqués and G. H. Gilmer.
  Physical Review B 54, 16683 (1996)
• Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions
  J. E. Rubio, L. A. Marqués, L. Pelaz, M. Jaraiz and J. Barbolla.
  Nuclear Instruments & Methods In Physics Research Section B 112, 156 (1996)
• Molecular dynamics studies of the ion beam induced crystallization in silicon
  L. A. Marqués, M. J. Caturla, H. Huang and T. Diaz de la Rubia.
  MRS Symp. Proc. 396, 201 (1996)
• Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions
  J. E. Rubio, L. A. Marqués, M. Jaraiz, L. A. Bailón and J. Barbolla.
  Nuclear Instruments & Methods In Physics Research Section B 102, 301 (1995)
• An improved molecular dynamics scheme for ion bombardment simulations
  L. A. Marqués, J. E. Rubio, M. Jaraiz, L. Enríquez and J. Barbolla.
  Nuclear Instruments & Methods In Physics Research Section B 102, 7 (1995)