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Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth

M. Aboy, L. Pelaz, P. López, L. A. Marqués, R. Duffy and V. C. Venezia

Applied Physics Letters 88, 191917 (2006)

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Abstract:

Kinetic Monte Carlo simulations of B diffusion and activation in preamorphized Si during annealing after solid phase epitaxial regrowth have been used to provide insight into the mechanisms that drive these phenomena. Simulations show that the presence of an initially high active B concentration along with a Si interstitial supersaturation set by end of range defects leads to simultaneous B deactivation and uphill diffusion through the capture of mobile interstitial B in the high concentration region during subsequent anneal treatments. Once the Si interstitial supersaturation decays close to equilibrium values, B clusters dissolve and emitted B diffuses downhill, following the B concentration gradient. The active B concentration at the minimum state of activation becomes higher as the annealing temperature increases as a consequence of a faster increase of the B cluster dissolution rate compared with the formation rate.

DOI: 10.1063/1.2203334

PDF: Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth

Funded by:

• TEC2005-05101: Modeling and characterization of fabrication processes for next CMOS generations,
  
• VA070A05: Atomistic simulation of ion implantation and annealing for the fabrication of electronic devices for the 45nm technological node,
  

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