1. Home
2. Publications
3. Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

G. Fisicaro, L. Pelaz, M. Aboy, P. Lopez et al.

Applied Physics Express 7, 021301 (2014)

• Share:

---

Abstract:

We investigate the correlation between dopant activation and damage evolution in boron-implanted silicon under excimer laser irradiation. The dopant activation efficiency in the solid phase was measured under a wide range of irradiation conditions and simulated using coupled phase-field and kinetic Monte Carlo models. With the inclusion of dopant atoms, the presented code extends the capabilities of a previous version, allowing its definitive validation by means of detailed comparisons with experimental data. The stochastic method predicts the post-implant kinetics of the defect-dopant system in the far-from-equilibrium conditions caused by laser irradiation. The simulations explain the dopant activation dynamics and demonstrate that the competitive dopant-defect kinetics during the first laser annealing treatment dominates the activation phenomenon, stabilizing the system against additional laser irradiation steps.

DOI: 10.7567/APEX.7.021301

PDF: Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

UVaDOC: Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

Funded by:

• European Seventh Framework Programme (FP7/2007–2013) under grant agreement No. 258547 ATEMOX (Advanced Technology Modeling for Extra-Functionality Devices).
• TEC2011-27701: Bringing radiation induced defects to macroscopic effects through multiscale modeling,
  

---

Related publications

By theme:

• Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
• Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth
• Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data
• Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
• The laser annealing induced phase transition in silicon: a molecular dynamics study

By author:

• Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon