Universidad de Valladolid

Universidad de Valladolid

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

G. Fisicaro, L. Pelaz, M. Aboy, P. Lopez et al.

Applied Physics Express 7, 021301 (2014)


Abstract:

We investigate the correlation between dopant activation and damage evolution in boron-implanted silicon under excimer laser irradiation. The dopant activation efficiency in the solid phase was measured under a wide range of irradiation conditions and simulated using coupled phase-field and kinetic Monte Carlo models. With the inclusion of dopant atoms, the presented code extends the capabilities of a previous version, allowing its definitive validation by means of detailed comparisons with experimental data. The stochastic method predicts the post-implant kinetics of the defect-dopant system in the far-from-equilibrium conditions caused by laser irradiation. The simulations explain the dopant activation dynamics and demonstrate that the competitive dopant-defect kinetics during the first laser annealing treatment dominates the activation phenomenon, stabilizing the system against additional laser irradiation steps.

DOI: 10.7567/APEX.7.021301

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