The Multiscale Materials Modeling Research Group is focused on the theoretical and computational study of phenomena that emerge from nonequilibrium processes in solid-state materials with emphasis in ion beam induced defects in crystalline semiconductors such as silicon. In our studies we combine a range of atomistic modeling techniques, to gain fundamental understanding of material properties and to provide clues for process optimization and development of structures with properties desirable for technological applications.
We are currently engaged in projects for defining defect engineering strategies for optoelectronics and doping of advanced logic silicon devices based on the understanding of fundamental defect properties.
We are eager to actively collaborate with other research groups to complement our investigations and with industry to focus our studies on problems with technological relevance.
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