Atomistic simulation of ion implantation and annealing for the fabrication of electronic devices for the 45nm technological node

Project VA070A05, funded by Logo JCyL

The process technology to reach nanometer scale is very complex. For this reason, atomistic simulation plays a key role in the challenges for the 45 technology node. Ion implantation and thermal annealing are the processes used for the dopant incorporation and electrical activation in silicon-based p-n junctions. Dopant profile abruptness and high electrical activation are limited by complex interactions among dopants and defects generated in the process. The understanding and modeling of these interactions is required for the development of predictive simulation tools. Molecular dynamics will be used for in this project for the study of fundamental properties. Kinetic Monte Carlo will allow us to extend the simulation capabilities to macroscopic space and time scales. We will focus our research on amorphization and recrystallization, dopant diffusion and activation, and dopant-damage interactions. All this issues have open questions that are crucial for the technology development.