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Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

M. Aboy, L. Pelaz, J. Montserrat, F. J. Bermudez and J. J. Hamilton

Nuclear Instruments and Methods in Physics Research Section B 257, 152 (2007)

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Abstract:

We investigate the influence of the buried Si/SiO2 interface in Silicon-on-insulator (SOI) substrates on B electrical activation by comparing experimental data and atomistic simulations in bulk Si and SOI materials. In crystalline Si, the effect of the Si/SiO₂ interface on the formation of B clusters is practically negligible because they are formed rapidly and locally in the region with high B and Si interstitial concentrations. Only during post-implant anneal a slight acceleration of B activation occurs, as the Si/SiO₂ interface increases the removal of Si interstitials and facilitates B cluster dissolution. In pre-amorphized Si, B clusters form during the regrowth. Therefore, the effect of the Si/SiO₂ interface is mainly related to its influence on end of range defect (EOR) evolution after regrowth which in turn affects B deactivation and reactivation. Thus, slightly less B deactivation occurs in SOI compared to bulk Si samples as the Si/SiO₂ interface accelerates EOR defect dissolution. The effect is more significant as EOR damage is closer to the Si/SiO₂ interface.

DOI: 10.1016/j.nimb.2006.12.157

PDF: Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

Funded by:

• TEC2005-05101: Modeling and characterization of fabrication processes for next CMOS generations,
  
• VA070A05: Atomistic simulation of ion implantation and annealing for the fabrication of electronic devices for the 45nm technological node,
  

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