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Atomistic analysis of the role of silicon interstitials in boron cluster dissolution

M. Aboy, L. Pelaz, L. A. Marqués, P. López and J. Barbolla

MRS Symp. Proc. 810, C7.3 (2004)

Abstract:

Boron implantation into preamorphized Si, followed by low temperature solid phase epitaxial (SPE) regrowth produces high activation combined with low diffusion. However, in the presence of high B concentrations, the activation obtained after the SPE regrowth only can reach concentrations in the order of a few times 10²⁰ cm⁻³, and even more deactivation occurs during additional annealing. We have analyzed the role of the Si interstitials injected from the end of range (EOR) damage in B deactivation and reactivation by atomistic simulations. We have shown that the B cluster evolution can be clearly correlated to the evolution of Si interstitial defects at EOR. This is also compatible with B cluster stabilization in the presence of excess Si interstitials, observed in oxidation experiments.

DOI: 10.1557/PROC-810-C7.3

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