Universidad de Valladolid

Universidad de Valladolid

Atomistic analysis of defect evolution and transient enhanced diffusion in silicon

M. Aboy, L. Pelaz, L. A. Marqués, L. Enríquez and J. Barbolla

Journal of Applied Physics 94, 1013 (2003)


Kinetic Monte Carlo simulations are used to analyze the ripening and dissolution of small Si interstitialclusters and {113} defects, and its influence on transient enhanced diffusion of dopants in silicon. The evolution of Si interstitial defects is studied in terms of the probabilities of emitted Si interstitials being recaptured by other defects or in turn being annihilated at the surface. These two probabilities are related to the average distance among defects and their distance to the surface, respectively. During the initial stages of the defect ripening, when the defect concentration is high enough and the distance among them is small, Si interstitials are mostly exchanged among defects with a minimal loss of them to the surface. Only when defects grow to large sizes and their concentration decreases, the loss of Si interstitials through diffusion to the surface prevails, causing their dissolution. The presence of large and stable defects near the surface is also possible when the implant energy is low—small distance to the surface—but the dose is high enough—even smaller distance among defects. The exchange of Si interstitials among defects sets a interstitial supersaturation responsible for the temporary enhancement of the diffusivity of interstitial diffusing dopants. The transitory feature of the enhancement is well correlated to the extinction of the Si interstitial defects.

DOI: 10.1063/1.1586990

PDF: Atomistic analysis of defect evolution and transient enhanced diffusion in silicon