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Physical insight into ultra-shallow junction formation through atomistic modeling

L. Pelaz, M. Aboy, P. López, I. Santos and L. A. Marqués

Nuclear Instruments and Methods in Physics Research Section B 253, 41 (2006)

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Abstract:

We use atomistic simulations to gain physical understanding of relevant dopant–defect interactions involved in junction formation. The analysis of the energetics of B–Si interstitial clusters (BICs) indicates that a high Si interstitial supersaturation is necessary to nucleate BICs in crystalline Si, but only a Si interstitial supersaturation slightly larger than that set by BICs is enough to cause the stabilization and growth of preexisting BICs. We have analyzed the mechanisms associated to B uphill diffusion and deactivation in preamorphized Si upon subsequent annealing. Both phenomena occur simultaneously and they are the result of the trapping of B atoms by preexisting B clusters in the high concentration region.

DOI: 10.1016/j.nimb.2006.10.036

PDF: Physical insight into ultra-shallow junction formation through atomistic modeling

Funded by:

• TEC2005-05101: Modeling and characterization of fabrication processes for next CMOS generations,
  
• VA070A05: Atomistic simulation of ion implantation and annealing for the fabrication of electronic devices for the 45nm technological node,
  

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