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Atomistic modeling of dopant implantation, diffusion, and activation

L. Pelaz, M. Aboy, P. López and L. A. Marqués

Journal of Vacuum Science & Technology B 24, 2432 (2006)

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Abstract:

Atomistic kinetic Monte Carlo simulations have been performed to illustrate the correlation between the Si interstitial defects generated by ion implantation, and B diffusion and activation in Si. The amount of residual damage is not very affected by moderate dynamic anneal during subamorphizing implants. However, dynamic anneal even at room temperature significantly influences the residual damage in amorphizing implants. The efficiency of the surface as a sink for point defects affects the evolution of Si interstitial defects. They set the Si interstitial supersaturation that is responsible for transient enhanced diffusion of B and also control the formation and dissolution of B–Si interstitialclusters.

DOI: 10.1116/1.2348726

PDF: Atomistic modeling of dopant implantation, diffusion, and activation

Funded by:

• TEC2005-05101: Modeling and characterization of fabrication processes for next CMOS generations,
  
• VA070A05: Atomistic simulation of ion implantation and annealing for the fabrication of electronic devices for the 45nm technological node,
  

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