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Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices

L. Pelaz, L. A. Marqués, M. Aboy, P. López, I. Santos and R. Duffy

IEEE International Electron Devices Meeting (IEDM 2009), 513 (2009)

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Abstract:

Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters for doping of FinFETs are presented, considering lateral diffusion and activation.

DOI: 10.1109/IEDM.2009.5424309

PDF: Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices

Funded by:

• TEC2008-06069: Multi-scale modeling and simulation of Si processes for nanometric devices,
  
• VA011A09: Atomistic simulation of defects in Ge: from materials properties to technological processes,
  

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