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Atomistic modeling of ion beam induced amorphization in silicon

L. Pelaz, L. A. Marqués, P. López, I. Santos, M. Aboy and J. Barbolla

Nuclear Instruments and Methods in Physics Research Section B 241, 501 (2005)

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Abstract:

Ion beam induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this work, we briefly describe the existing phenomenological and defect-based amorphization models. We focus on the atomistic model we have developed to describe ion beam induced amorphization in Si. In our model, the building block for the amorphous phase is the bond defect or IV pair, whose stability increases with the number of surrounding IV pairs. This feature explains the regrowth behavior of different damage topologies and the kinetics of the crystalline to amorphous transition. The model provides excellent quantitative agreement with experimental results.

DOI: 10.1016/j.nimb.2005.07.096

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