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Molecular dynamics studies of the ion beam induced crystallization in silicon

L. A. Marqués, M. J. Caturla, H. Huang and T. Diaz de la Rubia

MRS Symp. Proc. 396, 201 (1996)

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Abstract:

We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecular dynamics techniques. The growth of small crystal seeds embedded in the amorphous phase has been monitored for several temperatures in order to get information on the effect of the thermal temperature increase introduced by the incoming ion. The role of ion-induced defects on the growth has been also studied.

DOI: 10.1557/PROC-396-201

PDF: Molecular dynamics studies of the ion beam induced crystallization in silicon

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