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Characterization of octadecaborane implantation into Si using molecular dynamics

L. A. Marqués, L. Pelaz, I. Santos and V. C. Venezia

Physical Review B 74, 201201 (2006)

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Abstract:

We carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si. We obtained and analyzed the doping profiles, lateral straggling and the damage amount and morphology produced within the target, as well as its annealing behavior. Our simulation results indicate that the use of octadecaborane clusters for the fabrication of ultrashallow junctions shows several advantages with respect to monatomic B beams, mainly related to target self-amorphization which reduces channeling and the amount of residual damage at the end of range.

DOI: 10.1103/PhysRevB.74.201201

PDF: Characterization of octadecaborane implantation into Si using molecular dynamics

Funded by:

• TEC2005-05101: Modeling and characterization of fabrication processes for next CMOS generations,
  
• VA070A05: Atomistic simulation of ion implantation and annealing for the fabrication of electronic devices for the 45nm technological node,
  

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