We have studied the influence of the so called “bond defect” in the silicon amorphization process using molecular dynamics simulation techniques. The bond defect consists in a local distortion of the silicon lattice with no excess or deficit of atoms, and it can be formed during ion-beam irradiation. Even though the bond defect lifetime is too short to justify damage accumulation at usual implantation temperatures, we have observed however that the interaction between close bond defects can generate more stable structures which behave as the amorphous pockets created by ion irradiation. We have seen as well that the recombination of a given amount of damage created by bond defect accumulation depends of its spatial distribution.
PDF: The role of the bond defect on silicon amorphization: a molecular dynamics study