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Characterization of amorphous Si generated through classical molecular dynamics simulations

I. Santos, P. López, M. Aboy, L. A. Marqués, L. Pelaz

2017 Spanish Conference on Electron Devices (CDE), 1-4 (2017)

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Abstract:

We performed a characterization of the energetic and structural features of amorphous Si using classical molecular dynamics simulations. We generated amorphous Si samples from different procedures: quenching liquid silicon, accumulating the damage generated by subsequent energetic recoils, and accumulating point defects. The obtained energetic and structural features of these types of samples are analyzed to elucidate which procedure provides a more realistic a-Si structure.

DOI: 10.1109/CDE.2017.7905213

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Funded by:

• TEC2014-60694-P: Multiscale modeling approach to defect engineering for extending semiconductor applications,
  
• VA331U14: Modeling approach to defect engineering in semiconductor structures,
  

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