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Atomistic analysis of the annealing behavior of amorphous regions in silicon

P. López, L. Pelaz, L. A. Marqués and I. Santos

Journal of Applied Physics 101, 093518 (2007)

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Abstract:

We have analyzed the features of recrystallization of amorphous regions, using an atomistic amorphization-recrystallization model that considers the Si interstitial-vacancy pair as the building block for the amorphous phase. Both small amorphous pockets and large continuous amorphous layers are modeled as an accumulation of Si interstitial-vacancy pairs. In our model recrystallization is envisioned as a local rearrangement of atoms, the recrystallization rate of Si interstitial-vacancy pairs being determined by their local coordination. This feature explains the differences in the annealing behavior of amorphous regions with different topologies, the faster regrowth velocity of the damage tail compared with the continuous amorphous layer, and the independence of the regrowth velocity on the amorphous layer depth.

DOI: 10.1063/1.2729468

PDF: Atomistic analysis of the annealing behavior of amorphous regions in silicon

Funded by:

• TEC2005-05101: Modeling and characterization of fabrication processes for next CMOS generations,
  
• VA070A05: Atomistic simulation of ion implantation and annealing for the fabrication of electronic devices for the 45nm technological node,
  

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