We provide experimental evidence of the distortion of a F profile by the presence of a CVD grown B box. After annealing, a depletion in the F profile is observed fitting the position of the immobile part of B profile. To study this phenomenon further experiments were designed and atomistic simulations were done using a recently developed F model. In this model F complexes with both Si interstitials (F‐I) and vacancies (F‐V) are included. The formation of Boron‐Interstitial Clusters is found to reduce the local Si interstitials defect concentration. This feature may be responsible for the reported F distortion by the presence of a B box.