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Multiscale modeling of radiation damage and annealing in Si

L. Pelaz, L. A. Marqués, P. López, I. Santos and M. Aboy

Nuclear Instruments and Methods in Physics Research Section B 255, 95 (2007)

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Abstract:

The fabrication of small Si devices brings up complex physical mechanisms, whose modeling requires a multiscale approach. We illustrate the case of ion implantation and annealing in Si. Ab initio calculations and molecular dynamics simulations provide defect energetics and the physical basis for defect formation and annihilation mechanisms. Binary-collision approximation for ion implantation combined with kinetic Monte Carlo simulation for annealing is used to define the range of validity of some approximations used in continuum models.

DOI: 10.1016/j.nimb.2006.11.035

PDF: Multiscale modeling of radiation damage and annealing in Si

Funded by:

• TEC2005-05101: Modeling and characterization of fabrication processes for next CMOS generations,
  
• VA070A05: Atomistic simulation of ion implantation and annealing for the fabrication of electronic devices for the 45nm technological node,
  

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