The F effect in crystalline Si is quantified by monitoring defects and B diffusion in samples implanted with 25 keV F+ and/or 40 keV Si+. We estimate that about +0.4 Si interstitials are generated per implanted F+ ion, in agreement with the value resulting from the net separation of Frenkel pairs. For short annealings, B diffusion is lower when F+ is coimplanted with Si+ than when only Si+ is implanted, while for longer annealings, B diffusion is higher. This is consistent with a lower but longer-lasting Si interstitial supersaturation set by the additional defects generated by the F+ implant.
PDF: Si interstitial contribution of F+ implants in crystalline Si