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Si interstitial contribution of F⁺ implants in crystalline Si

P. López, L. Pelaz, R. Duffy et al.

Journal of Applied Physics 103, 093538 (2008)

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Abstract:

The F effect in crystalline Si is quantified by monitoring defects and B diffusion in samples implanted with 25 keV F⁺ and/or 40 keV Si⁺. We estimate that about +0.4 Si interstitials are generated per implanted F⁺ ion, in agreement with the value resulting from the net separation of Frenkel pairs. For short annealings, B diffusion is lower when F⁺ is coimplanted with Si⁺ than when only Si⁺ is implanted, while for longer annealings, B diffusion is higher. This is consistent with a lower but longer-lasting Si interstitial supersaturation set by the additional defects generated by the F⁺ implant.

DOI: 10.1063/1.2917297

PDF: Si interstitial contribution of F⁺ implants in crystalline Si

Funded by:

• TEC2005-05101: Modeling and characterization of fabrication processes for next CMOS generations,
  
• VA070A05: Atomistic simulation of ion implantation and annealing for the fabrication of electronic devices for the 45nm technological node,
  

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