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F⁺ implants in crystalline Si: The Si interstitial contribution

P. López, L. Pelaz, R. Duffy, P. Meunier-Beillard, F. Roozeboom, K. van der Tak, P. Breimer et al.

MRS Symp. Proc. 1070, E06-07 (2008)

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Abstract:

In this work the Si interstitial contribution of F⁺ implants in crystalline Si is quantified by the analysis of extended defects and B diffusion in samples implanted with 25 keV F⁺ and/or 40 keV Si⁺. We estimate that approximately 0.4-0.5 Si interstitials are generated per implanted F⁺ ion, which is in good agreement with the value resulting from the net separation of Frenkel pairs obtained from MARLOWE simulations. The damage created by F⁺ implants in crystalline Si may explain the presence of extended defects in F-enriched samples and the evolution of B profiles during annealing. For short anneals, B diffusion is reduced when F⁺ is co-implanted with Si⁺ compared to the sample only implanted with Si⁺, due to the formation of more stable defects that set a lower Si interstitial supersaturation. For longer anneals, when defects have dissolved and TED is complete, B diffusion is higher because the additional damage created by the F⁺ implant has contributed to enhance B diffusion.

DOI: 10.1557/PROC-1070-E06-07

PDF: F+ implants in crystalline Si: The Si interstitial contribution

Funded by:

• TEC2005-05101: Modeling and characterization of fabrication processes for next CMOS generations,
  
• VA070A05: Atomistic simulation of ion implantation and annealing for the fabrication of electronic devices for the 45nm technological node,
  

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