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Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2×1 Substrates

Luis Martín-Encinar, Luis A. Marqués, María Aboy, Pedro López, Iván Santos, Lourdes Pelaz

2023 Spanish Conference on Electron Devices (CDE) 2023, 1-4 (2023)

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Abstract:

We studied epitaxial growth of Ge films on Si(001) 2×1 at different temperatures using classical molecular dynamics simulations. Ge-Si intermixing contributes to strain accommodation mostly in the original Si substrate surface and first grown Ge layer. Stress accumulation is further released by the generation of dislocations whose amount and type depend on temperature. At high temperatures, a larger amount and more variety of dislocations are formed, thus affecting the surface morphology and consequently the size of 3D islands.

DOI: 10.1109/CDE58627.2023.10339527

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Funded by:

• PID2020-115118GB-I00: Atomistic modeling of high energy irradiation in semiconductors,
  
• TEC2017-86150-P: Atomistic modeling of epitaxial growth mechanisms of SiGe,
  
• VA097P17: Study of advanced technological processes for manufacturing nanometric electronic devices through predictive simulation techniques,
  

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