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Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar⁺ ions

J. E. Rubio, L. A. Marqués, L. Pelaz, M. Jaraiz and J. Barbolla

Nuclear Instruments and Methods in Physics Research Section B 112, 156 (1996)

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Abstract:

The fluence dependence of the Si sputtering by 1 keV Ar⁺ has been studied by molecular dynamics simulations. To this purpose, previously amorphized samples with different initial argon concentration have been ion bombarded and the sputtered atoms have been analyzed. The calculated sputtering yield increases with the argon content according to the experimental results. The mechanisms involved in this sputtering enhancement are discussed.

DOI: 10.1016/0168-583X(95)01140-4

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