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Molecular dynamics simulation of amorphous silicon sputtering by Ar⁺ ions

J. E. Rubio, L. A. Marqués, M. Jaraiz, L. A. Bailón and J. Barbolla

Nuclear Instruments and Methods in Physics Research Section B 102, 301 (1995)

Abstract:

Molecular dynamics simulations of the sputtering of amorphous silicon by 1 keV Ar⁺ ions are reported. The amorphous sample was prepared by melting and subsequently quenching an 8000 atom (100) Si crystal. The results obtained for the sputtering yield, kinetic energy distribution, layer ejection yield and atoms per single ion ratios are compared with those obtained for silicon crystalline samples at 0 K and at 300 K.

DOI: 10.1016/0168-583X(95)80157-H

PDF: Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

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