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I_ON degradation in Si devices in harsh radiation environments: modeling of damage-dopant interactions

P. López, M. Aboy, I. Muñoz, I. Santos, L. A. Maqués, C. Couso, M. Ullán, L. Pelaz.

2018 Spanish Conference on Electron Devices (CDE), 1-4 (2018)

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Abstract:

Electronic devices operating in harsh radiation environments must withstand high radiation levels with minimal performance degradation. Recent experiments on the radiation hardness of a new vertical p-type JFET power switch have shown a significant reduction of forward drain current under non-ionizing conditions. In this work, atomistic simulations are used to study the impact of irradiation-induced displacement damage on forward characteristics. Damage models have been updated to produce a better description of damage-dopant interactions at RT. Our results show that excess self-interstitials produced by irradiation deactivate a significant amount of B atoms, thus reducing the effective dopant concentration.

DOI: 10.1109/CDE.2018.8596953

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Funded by:

• TEC2014-60694-P: Multiscale modeling approach to defect engineering for extending semiconductor applications,
  
• VA119G18: Study of advanced technological processes for manufacturing nanometric electronic devices through predictive simulation techniques,
  

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