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On the anomalous generation of {001} loops during laser annealing of ion-implanted silicon

L. A. Marqués, M. Aboy, I. Santos, P. López, F. Cristiano, A. La Magna, K. Huet, T. Tabata, L. Pelaz

Nuclear Instruments and Methods in Physics Research B 458, 179-183 (2019)

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Abstract:

We combine focused experiments with molecular dynamics simulations to investigate in detail the formation of {001} loops in nanosecond laser-annealed silicon. We demonstrate that at temperatures close to the melting point, self-interstitial rich silicon is driven into dense liquid-like droplets that are highly mobile within the solid crystalline matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond timescale.

DOI: 10.1016/j.nimb.2018.09.030

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Funded by:

• TEC2014-60694-P: Multiscale modeling approach to defect engineering for extending semiconductor applications,
  
• VA119G18: Study of advanced technological processes for manufacturing nanometric electronic devices through predictive simulation techniques,
  

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