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Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique

P. López, D. Calvo, I. Santos, M. Aboy, L. A. Marqués, M. Trochet, N. Mousseau and L. Pelaz

2017 Spanish Conference on Electron Devices (CDE), 1-4 (2017)

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Abstract:

The modeling of self-interstitial defects evolution is key for process and device optimization. For a self-interstitial cluster of a given size, several configurations or topologies exist, but conventional models assume that the minimum energy one is instantaneously reached. The existence of significant energy barriers for configurational transitions may change the picture of defect evolution in non-equilibrium processes (such as ion implantation), and contribute to explain anomalous defect observations. In this work, we present a method to determine the energy barriers for topological transitions among small self-interstitial defects, which is applied to characterize the Si self-interstitial and the di-interstitial cluster.

DOI: 10.1109/CDE.2017.7905224

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Funded by:

• TEC2014-60694-P: Multiscale modeling approach to defect engineering for extending semiconductor applications,
  
• VA331U14: Modeling approach to defect engineering in semiconductor structures,
  

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