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Universidad de Valladolid

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Research topics

MMMI belong to the Multiscale Materials Modeling Group, part of the Research Group on Electronics at the University of Valladolid. Our research is focused on the theoretical and computational study of phenomena that emerge from nonequilibrium processes in solid-state materials with emphasis in ion beam induced defects in crystalline semiconductors such as silicon.

My activity within this group gathers the following topics:

  • Damage generation during irradiation of materials
    Improved BCADuring irradiation, energetic particles penetrate into the target and lose their energy through interactions with its atoms. A target atom is displaced from its lattice position when it receives from these interactions an energy higher than the displacement energy threshold Ed. For energy transfers above Ed, the target atom can become a recoil leaving behind a vacancy and generating an interstitial defect where it stops, in addition to further displacements that can be produced as it travels through the material. When energy transfers to target atoms are well above Ed, damage generation can be regarded as a ballistic process. As energy transfers decreases in magnitude and approach Ed, multiple interactions with target atoms become important. These multiple interactions can result in a local melting (thermal spike regime) and the subsequent generation of amorphous regions at energy transfers per atom much lower than Ed.
    I have used classical molecular dynamics simulations to study damage generation in Si and Ge. I have developed a general framework for damage generation that captures the transition from the ballistic to the thermal regime. It has been successfully applied to monatomic and molecular implantations, where non-linear effects on damage generation occur. Although the model was based on semiconductors, it can be applied with appropriate calibration to other materials.
  • Amorphous films
    B doping of aSiThe use of heterojunctions between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) has attracted much attention in recent years for the fabrication of solar cells with efficiencies up to 23%. Furthermore, the possibility of doping a-Si and a-Si:H and their lower production cost with respect to c-Si have made them the materials of choice for many different applications in optoelectronics and photovoltaics. Yet, these promising perspectives are highly limited by the large defect density present in bulk a-Si and at the a-Si:H/c-Si interfaces, which reduces the doping efficiency and increases the interface carrier recombination losses in solar cells.
    I have used ab initio simulations to study the relevant defects states in a-Si and at its interface with c-Si, and how these defects interact with charge carriers. I have identified intrinsic hole traps in a-Si associated to locally strained regions, and I have analyzed their interaction with boron atoms. I have found that the low doping efficiency in the case of B is an intrinsic property of amorphous silicon since, even if it is well relaxed, locally strained regions exist. This fact limits the application of amorphous silicon in devices that require higher carrier densities.
  • Defects in semiconductors
    Defects in cSiThe presence of structural defects in crystalline semiconductors often leads to shallow or deep levels in the gap that modify the usual valence band ↔ conduction band carrier transitions, and may also act as additional scattering centers. This often has adverse effects on the performance of devices and the efficiency of solar cells. In addition, semiconductor radiation detectors and devices exposed to radiation may undergo the phenomenon of type inversion, attributed to charge trapping in damage structures. But damage may also have beneficial applications as some defect clusters may be optically active bestowing enhanced optical performance on silicon. The understanding of defect effects is key for defining defect engineering strategies. Because of the large variety of defects that often coexist, experimental structural and spectroscopic characterization techniques find it difficult to assign a given signal to a specific defect.
    Using ab initio simulations I analyze how the band diagram of crystalline Si is modified by the presence of defects, and how the induced mid-gap defect states can affect the recombination of carriers. I also analyze the different atomic configurations of a given defect, evaluate their formation energy, and how defects interact among others and result in new defects.

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PhD Thesis

Front Cover I finished my Doctorate studies on Physics on March 15th 2010. The title of my Thesis is "Multiscale modeling of dopant implantation and diffusion in crystalline and amorphous silicon". The aim of the thesis is the understanding and modeling of dopant implantation in crystalline silicon and of dopant properties and atomic diffusion in amorphous silicon. In particular we have focused on the following objectives:

  • The characterization and quantification of damage generation during monatomic and molecular implantations in crystalline silicon to set the physics basis for the general damage generation mechanisms by ion implantation.
  • The development of an efficient atomistic model for damage generation through ion implantation that provides a realistic damage description, and its implementation in simulator based on the binary collision approximation in order to correctly simulate monatomic and molecular implantations with an affordable computer cost for industrial applications.
  • The understanding of the role of existing defects, surfaces and interfaces on the generation and stability of damage.
  • The understanding of the energetic and structural features of B atoms in amorphous silicon and their role in the doping of this material, and the characterization and quantification of the atomistic diffusion in amorphous silicon during annealing treatments.

During my PhD studies I performed two stays abroad. The first one was with Prof. W. Windl (Ohio State University, USA) for studying the boron dopind of amorphous silicon with ab initio simulations. The second one was with Prof. L. Colombo (University of Cagliary, Italy) for studying the atomic rearrangement mechanisms driving the self diffusion in amorphous silicon during annealing.

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Articles in Journals

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Contributions to conferences

  • Atomistic study of damage generated from low energy collective collisions in SiC
    H. Briongos-Merino, I. Santos, L. Martín-Encinar, P. López, M. Aboy, L.A. Marqués, L. Pelaz
    22th International Conference on Ion Beam Modificaiton of Materials (IBMM 2022)
  • Atomistic modeling of the acceptor removal in p-type Si induced by neutron irradiation
    P. López, M. Aboy, I. Santos, L.A. Marqués, M. Ullán, L. Pelaz
    22th International Conference on Ion Beam Modificaiton of Materials (IBMM 2022)
  • Seeking for efficient amorphous Si solar cell substrates from Raman spectra: an atomistic study
    C. Martín-Valderrama, I. Santos, M. Aboy, L.A. Marqués, P. López, L. Pelaz
    The European Physical Society Forum 2022 (EPS Forum 2022)
  • Expanding defect models to capture relevant features of new Si processes and devices
    I. Santos, M. Aboy, A. Caballo, L.A. Marqués, P. López, L. Pelaz
    European Materials Research Society Spring Meeting (E-MRS 2021)
  • Atomistic simulation of the acceptor removal process in p-type Si irradiated with neutrons
    P. López, M. Aboy, I. Muñoz, I. Santos, L. A. Maqués, C. Couso, M. Ullán, L. Pelaz
    European Materials Research Society Spring Meeting (E-MRS 2021)
  • Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential
    L. Martín, I. Santos, P. López, L. A. Marqués, M. Aboy, and L. Pelaz
    Conferencia de Dispositivos Electrónicos (CDE 2018)
  • ION degradation in Si devices in harsh radiation environments: modeling of damage-dopant interactions
    P. López, M. Aboy, I. Muñoz, I. Santos, L. A. Maqués, C. Couso, M. Ullán, L. Pelaz
    Conferencia de Dispositivos Electrónicos (CDE 2018)
  • On the anomalous generation of {001} Loops during laser annealing of ion-implanted silicon
    L. A. Marqués, M. Aboy, I. Santos, P. López, F. Cristiano, A. La Magna, K. Huet, T. Tabata, L. Pelaz
    European Materials Research Society Spring Meeting (E-MRS 2018)
  • Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation
    M. Ruiz, M. Aboy, I. Santos, L. A. Marqués, P. López and L. Pelaz
    17th Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 2017)
  • W and X photoluminescence centers in c-Si: chasing candidates at atomic level through multiscale simulations
    I. Santos, M. Aboy, P. López, L. A. Marqués and L. Pelaz
    17th Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 2017)
  • First-principles study of the effect of C and Ge atoms on hole traps in amorphous Silicon
    I. Santos, M. Aboy, P. López, L. A. Marqués, L. Pelaz
    29th International Conference on Defects in Semiconductors (ICDS 2017)
  • Characterization of amorphous Si generated through classical molecular dynamics simulations
    I. Santos, P. López, M. Aboy, L. A. Marqués, L. Pelaz
    Conferencia de Dispositivos Electrónicos (CDE 2017)
  • Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique
    P. López, D. Calvo, I. Santos, M. Aboy, L. A. Marqués, M. Trochet, N. Mousseau and L. Pelaz
    Conferencia de Dispositivos Electrónicos (CDE 2017)
  • Transmission Electron Microscopy Image Simulation of Extended Defects in Silicon
    M. Ruiz, L. A. Marqués, M. Aboy, I. Santos, P. López, L. Pelaz
    Conferencia de Dispositivos Electrónicos (CDE 2017)
  • Atomistic Study of the Anisotropic Interaction between Extended and Point Defects in Crystalline Silicon and Its Influence on Si Self-Interstitial Diffusion
    I. Santos, M. Aboy, L. A. Marques, P. López, M. Ruiz, L. Pelaz, A. M. Hernández-Díaz, and P. Castrillo
    21st International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2016)
  • Bridging Radiation Induced Defects in Semiconductors to Macroscopic Effects through Mulstiscale Simulation
    L. Pelaz, L. Marqués, I. Santos, M. Ruiz, M. Aboy, P. López
    13th International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES 2016)
  • Modelling of defect induced strain fields in crystalline semiconductors
    I. Santos, A. M. Hernández-Díaz, P. Castrillo, M. Ruiz, L. A. Marqués, J. F. Jiménez-Alonso, L. Pelaz
    Advances in Materials & Processing Technologies (AMPT 2015)
  • Molecular dynamics simulations of intrinsic defects in amorphous Ge
    P. López, D. Calvo, L. A. Marqués, I. Santos, M. Aboy, L. Pelaz
    Gettering and Defect Engineering in Semiconductor Technology XVI (GADEST 2015)
  • Multiscale simulation of photoluminescence defects generated by ion implantation in c-Si
    I. Santos, M. Aboy, P. López, L. A. Marqués, L. Pelaz
    Gettering and Defect Engineering in Semiconductor Technology XVI (GADEST 2015)
  • Multiscale defect modeling: from fundamental properties to macroscopic effects
    L. Pelaz, I. Santos, L. A. Marqués, M. Aboy, P. López, M. Ruiz
    XXII International Conference on Ion-Surface Interactions (ISI 2015)
  • Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon
    L. A. Marqués, M. Aboy, M. Ruiz,I. Santos, P. López, L. Pelaz
    European Materials Research Society Spring Meeting (E-MRS 2015)
  • Defect clusters and photoluminescence lines in crystalline silicon
    I. Santos, M. Aboy, P. López, L. A. Marqués, L. Pelaz
    Nothing is perfect: The quantum mechanics of defects (2015)
  • MD simulations of vacancy-like defects in amorphous Ge
    P. López, J. M. Sánchez, L. Pelaz, L. A. Marqués, I. Santos, M. Aboy, M. Ruiz
    Conferencia de Dispositivos Electrónicos (CDE 2015)
  • Modeling of nanocalorimetry experiments to investigate the kinetics of damage annealing in self-implanted Si
    M. Ruiz, L. Pelaz, L. A. Marqués, P. López, I. Santos, M. Aboy
    Conferencia de Dispositivos Electrónicos (CDE 2015)
  • Optoelectronic properties of small defect clusters in Si from multiscale simulations
    I. Santos, M. Aboy, P. López, L. A. Marqués, M. Ruiz, L. Pelaz
    Conferencia de Dispositivos Electrónicos (CDE 2015)
  • Modeling of nanocalorimetry experiments of damage evolution in self-implanted silicon
    M. Ruiz, L. Pelaz, L. A. Marqués, P. López, I. Santos, M. Aboy
    7th International Conference on Multiscale Materials Modeling (MMM 2014)
  • Modeling and experimental characterization of {311} defects in silicon
    L. A. Marqués, K. J. Dudeck, G. A. Botton, L. Pelaz, I. Santos, P. López, M. Aboy, M. Ruiz
    7th International Conference on Multiscale Materials Modeling (MMM 2014)
  • Atomistic modeling of ion implanttion technologies in silicon
    L. A. Marqués, L. Pelaz, I. Santos, P. López, M. Aboy, M. Ruiz
    Computer Simulation of Radiation Effects in Solids (COSIRES 2014)
  • Molecular dynamics simulation of irradiaiton-induced defects in Si under low thermal treatments: identification and characterization of defect structures
    P. López, I. Santos, M. Aboy, L. A. Marqués, L. Pelaz
    Computer Simulation of Radiation Effects in Solids (COSIRES 2014)
  • Role of Defects in Non-equilibrium Impurity Transport Applied to Semiconductor Processing
    L. Pelaz, M. Aboy, I. Santos, P. López, L. A. Marqués
    13th International Conference on Modern Materials and Technologies (CIMTEC 2014) - 6th Forum on New Materials
  • Modeling of semiconductor properties to extend experimental characterization capabilities
    I. Santos, L. Pelaz, L. A. Marqués, M. Aboy, P. López, M. Ruiz
    NanoSpain Conference 2014
  • Modeling of Collision Cascades in Semiconductors: generation and annealing
    L. Pelaz, L. A. Marqués, P. López, I. Santos, M. Aboy
    Conferencia de Dispositivos Electrónicos (CDE 2013)
  • Microscopic modeling of interdiffusion in SiGe alloys
    P. Castrillo, I. Santos, R. Pinacho, E. Rubio, and M. Jaraiz
    Conferencia de Dispositivos Electrónicos (CDE 2013)
  • Identification of stable defect structures induced by irradiation in Si
    P. López, L. Pelaz, L. A. Marqués, I. Santos, and M. Aboy
    Conferencia de Dispositivos Electrónicos (CDE 2013)
  • Ab initio study of the electronic properties of defect states in Silicon
    I. Santos, M. Aboy, P. Castrillo, P. López, L. Pelaz, and L. A. Marqués
    Conferencia de Dispositivos Electrónicos (CDE 2013)
  • Ab initio study of the defect states at a-Si:H/c-Si interfaces
    I. Santos, M. Cazzaniga, B. Demaurex, S. De Wolf, G. Onida, and L. Colombo
    Conferencia de Dispositivos Electrónicos (CDE 2013)
  • Ab Initio Study of the Electronic Properties of a-Si:H/cSi Interfaces for Photovoltaic Applications
    M. Cazzaniga, I. Santos, B. Demaurex, S. De Wolf, G. Onida, and L. Colombo
    CECAM Conference: "Energy from the Sun: Computational Chemists and Physicists Take up the Challenge"
  • Effect of temperature on damage generation mechanisms during ion implantation: A classical molecular dynamics study
    I. Santos, L. A. Marqués, L. Pelaz, P. López, and M. Aboy
    19th International Conference on Ion Implantation Technology (IIT 2012).
    AIP Conference Proceedings 1496, 229 (2012)
  • Damage generation in thermal spike processes in Ge
    P. López, L. Pelaz, I. Santos, L. A. Marqués, and M. Aboy
    19th International Conference on Ion Implantation Technology (IIT 2012)
  • Ab initio study of the electronic properties of a-Si:H/cSi interfaces for photovoltaic applications
    M. Cazzaniga, I. Santos, L. Colombo, and G. Onida
    16th ETSF Workshop on Electronic Excitations 2011
  • Atomistic Modeling of Ion-Beam Irradiation in Semiconductors
    L. Pelaz, L. A. Marqués, I. Santos, P. López, and M. Aboy
    International Workshop on Nanoscale Pattern Formation at Surfaces (IWNPFS 2011)
  • Modeling of Advanced Ion Implantation Technologies in Semiconductors
    L. Pelaz, L. A. Marqués, I. Santos, P. López, and M. Aboy
    11th International Workshop on Junction Technology (IWJT 2011)
  • Molecular implants and cold implants: two new strategies for junction formation of future Si devices
    I. Santos, L. A. Marqués, P. López, L. Pelaz, and M. Aboy
    Conferencia de Dispositivos Electrónicos (CDE 2011)
  • Simulation study of ion implanted defects associated to luminescence centers in silicon
    M. Aboy, I. Santos, L. Pelaz, P. López, and L. A. Marqués
    Conferencia de Dispositivos Electrónicos (CDE 2011)
  • Atomistic process simulation for future generation nanodevices
    L. A. Marqués, L. Pelaz, M. Aboy, P. López, and I. Santos
    Conferencia de Dispositivos Electrónicos (CDE 2011)
  • Modeling of defect generation and dissolution in ion implanted semiconductors
    L. Pelaz, L. A. Marqués, I. Santos, M. Aboy, and P. López
    18th International Conference on Ion Implantation Technology (IIT 2010)
  • Simulation of p-n junctions: Present state and future challenges for technologies beyond 32nm
    L. Pelaz, L. A. Marqués, M. Aboy, P. López, and I. Santos
    International workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT 2009)
  • Atomistic modeling of junction formation: tools for physics understanding and process optimization
    L. Pelaz, M. Aboy, L. A. Marqués, P. López, and I. Santos
    Analytical techniques for semiconductor materials and process characterization VI (ALTECH 2009)
  • Atomistic Process Modeling Based on Kinetic Monte Carlo and Molecular Dynamics for Optimization of Advanced Devices
    L. Pelaz, L. A. Marqués, M. Aboy, P. López, and I. Santos
    International Electron Devices Meeting (IEDM 2009)
  • Atomistic simulations of the effect of implant parameters on Si damage
    P. López, L. Pelaz, L. A. Marqués, M. Aboy, and I. Santos
    Conferencia de Dispositivos Electronicos (CDE 2009)
  • Influence of Si surface on damage generation and recombination
    I. Santos, L. A. Marqués, L. Pelaz, P. López, and M. Aboy
    Conferencia de Dispositivos Electrónicos (CDE 2009)
  • Atomistic simulation techniques in front-end processing
    L. A. Marqués, L. Pelaz, I. Santos, P. López, and M. Aboy
    Materials Research Society Spring Meeting (MRS 2008)
  • First Principles Study of Boron in Amorphous Silicon
    I. Santos, W. Windl, L. Pelaz, and L. A. Marqués
    European Materials Research Society Spring Meeting (E-MRS 2008)
  • Modeling of surface effects on Si amorphization and recrystallization
    L. Pelaz, L. A. Marqués, P. López, I. Santos, and M. Aboy
    European Materials Research Society Spring Meeting (E-MRS 2008)
  • First Principles Study of Boron in Amorphous Silicon
    I. Santos, W. Windl, L. Pelaz, and L. A. Marqués
    Materials Research Society Spring Meeting (MRS 2008)
  • Atomistic Modeling of impurity ion implantation in ultra-thin-body Si devices
    L. Pelaz, M. Aboy, I. Santos, P. López, B. J. Pawlak, L. A. Marqués, R. Duffy, and K. van der Tak
    International Electron Devices Meeting (IEDM 2008)
  • Molecular dynamics modeling of octadecaborane implantation into Si
    L. A. Marqués, L. Pelaz, I. Santos, P. López, and M. Aboy
    Simulation of Semiconductor Processes and Devices (SISPAD 2007)
  • Physics Mechanisms Involved in the Formation and Recrystallization of Amorphous Regions in Si through ion Irradiation
    I. Santos, L. A. Marqués, L. Pelaz, P. López, and M. Aboy
    Materials Research Society Fall Meeting (MRS 2007)
  • Physics based models for process optimization
    L. Pelaz, L. A. Marqués, M. Aboy, I. Santos, and P. López
    Conferencia de Dispositivos Electrónicos (CDE 2007)
  • Molecular dynamics simulation of octadecaborane implantation into silicon
    L. A. Marqués, L. Pelaz, I. Santos, P. López, M. Aboy, and V. C. Venezia
    Conferencia de dispositivos electrónicos (CDE 2007)
  • Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime
    I. Santos, L. A. Marqués, L. Pelaz, and P. López
    Conferencia de Dispositivos Electrónicos (CDE 2007)
  • Atomistic Simulation of Damage Accumulation during Shallow B and As implant
    P. López, L. Pelaz, L. A. Marqués, I. Santos, and J. A. Van den Berg
    Conferencia de Dispositivos Electrónicos (CDE 2007)
  • Atomistic modelin of dopant implantation, diffusion and activation
    L. Pelaz, M. Aboy, P. López, L. A. Marqués, and I. Santos
    International Conference on Microelectronics and Interfaces (ICMI 2006)
  • Physical insight into ultra-shallow junction formation through atomistic modeling
    L. Pelaz, M. Aboy, P. López, L. A. Marqués, and I. Santos
    European Materials Research Society Spring Meeting (E-MRS 2006)
  • Multiscale modeling of radiation damage and annealing in Si
    L. Pelaz, L. A. Marqués, I. Santos, P. López, and M. Aboy
    International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES 2006)
  • Simulation study of amorphous pocket formation in Si at energy transfers below the displacement threshold
    I. Santos, L. A. Marqués, L. Pelaz, and P. López
    International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES 2006)
  • Molecular dynamics study of B18H22 cluster implantation into silicon
    L. A. Marqués, L. Pelaz, and I. Santos
    International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES 2006)
  • Atomistic Modeling of Junction Formation in Silicon
    L. Pelaz, M. Aboy, L. A. Marqués, P. López, and I. Santos
    Ultra Shallow Junctions (USJ 2005)
  • Atomistic simulations in Si processing: Bridging the gap between atoms and experiments
    L. A. Marqués, L. Pelaz, P. López, M. Aboy, I. Santos, and J. Barbolla
    European Materials Research Society Spring Meeting (E-MRS 2005)
  • Molecular dynamics characterization of as-implanted damage in silicon
    I. Santos, L. M. Cuesta, L. Pelaz, P. López, M. Aboy, and J. Barbolla
    European Materials Research Society Spring Meeting (E-MRS 2005)
  • Boron redistribution in pre-amorphized Si during thermal annealing
    L. Pelaz, M. Aboy, R. Duffy, V. C. Venezia, L. A. Marqués, P. López, I. Santos, J. Hernández-Mangas, L. A. Bailón, and J. Barbolla
    Conferencia de Dispositivos Electrónicos (CDE 2005)
  • Study of the amorphous phase of silicon using molecular dynamics simulation techniques
    L. A. Marqués, L. Pelaz, I. Santos, L. A. Bailón, and J. Barbolla
    Conferencia de Dispositivos Electrónicos (CDE 2005)
  • Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions
    M. Aboy, L. Pelaz, L. A. Cuesta, P. López, I. Santos, J. Barbolla, and R. Duffy,
    Conferencia de Dispositivos Electrónicos (CDE 2005)
  • Atomistic analysis of annealing behavior of amorphous regions
    P. López, L. Pelaz, L. A. Marqués, I. Santos, M. Aboy, and J. Barbolla
    Conferencia de Dispositivos Electrónicos (CDE 2005)
  • Morphology of as-implanted damage in silicon: a molecular dynamics study
    I. Santos, L. A. Marqués, L. Pelaz, M. Aboy, P. López, and J. Barbolla
    Conferencia de Dispositivos Electrónicos (CDE 2005)
  • Atomistic modeling of ion beam induced defects in silicon: from point defects to continuous amorphous layers
    L. Pelaz, L. A. Marqués, P. López, I. Santos, M. Aboy, and J. Barbolla
    Materials Research Society Spring Meeting (MRS 2004)
  • Atomistic modeling of ion beam induced amorphization in silicon
    L. Pelaz, L. A. Marqués, P. López, I. Santos, and J. Barbolla
    Conference on the Application of Accelerators in Research and Industry (CAARI 2004)
  • Atomistic Modelling of Defects Evolution in Si for Amorphizing and Subamorphizing Implants
    P. López, L. Pelaz, L. A. Marqués, I. Santos, M. Aboy, and J. Barbolla
    European Material Research Society Spring Meeting (E-MRS 2004)

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Other activities

Workshop on Reconfigurable Computation and Applications 2014

JCRA The Workshop on Reconfigurable Computation and Applications (Jornadas de Computación Reconfigurable y Aplicaciones, JCRA 2014) is an annual meeting point of the Spanish and Latin American research groups to discuss the latest advances, research and academic experiences in the field of reconfigurable computing, technologies and applications of programmable logic devices.

Variables Network

Variables VARIABLES thematic network is participated by most of the Spanish research groups whose activities include the topic of micro/nanoelectronic variability, covering in this way all the abstraction levels of the design and fabrication process. The network aims to provide a communication forum for the different groups, giving advantage to the exchange of experiences between areas and mobility of young and senior researchers, to promote joint research activities.

19th International Conference on Ion Implantation Technology, IIT2012

IIT2012 The Ion Implantation Technology Conference Series is the premier world meeting to discuss major challenges in current and emerging technologies related to the tools and processes for ion implantation. Our group organized the 19th edition, which was held in Valladolid, Spain, in June 25th-29th, 2012. IIT2012 also offered an expanded topical coverage to include detailed consideration of the state of art for advanced thermal processing and metrology techniques.

IIT2012 was preceded by a 3-day school on ion implantation science and technology taught by an international instructor corps of experts.

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