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Ultrafast generation of unconventional {001} loops in Si

Luis A. Marqués, María Aboy, Iván Santos, Pedro López, Fuccio Cristiano, Antonino La Magna, Karim Huet, Toshiyuki Tabata, and Lourdes Pelaz

Physical Review Letters 119, 205503 (2017)

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Abstract:

Ultra-fast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquid-like droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond timescale.

DOI: 10.1103/PhysRevLett.119.205503

PDF: Ultrafast generation of unconventional {001} loops in Si

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Funded by:

• TEC2014-60694-P: Multiscale modeling approach to defect engineering for extending semiconductor applications,
  
• VA331U14: Modeling approach to defect engineering in semiconductor structures,
  

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