Eform_?

Definition

Formation energy in silicon: Neccesary energy to create a native defect from crystalline silicon.

Interrogation mark (?) is used to indicate the particle for which the parameter is defined, for instance, Eform_I is the formation energy for interstitials.

Involved particles

Single neutral "native defects".

Units

Electron-volts (eV).

Related physical magnitudes

• Concentrations: Eform_? is the activation energy of the equilibrium concentration of single neutral "native defects" from silicon surface and interface.

Related DADOS mechanisms

• Surface emission: Eform_? affects the emission frequency of single neutral native defects from silicon surface and interface.

Comments

1. This formation energy affects also, as a consequence, to the formation energy of charged species and to the formation energy of impurity-"native defect" pairs.

2. Generation  of single neutral "native defects" in the volume is not implemented in DADOS, as its frequency is extemely low.

 

C0relEq_?

Definition

Prefactor of relative single neutral "native defects" concentration under equilibrium conditions.

Where:

• C_?,0^* is the prefactor of neutral interstitials or vacancies concentration in equilibrium conditions.
• See symbol list.

Interrogation mark (?) is used to indicate the particle for which the parameter is defined, for instance, C0relEq_I is used for interstitials.

Involved particles

Single neutral "native defects".

Units

Dimensionless.

Related physical magnitudes

• Concentrations: C0relEq_? is the prefactor of single neutral "native defects" emission under equilibrium conditions.

Related DADOS mechanisms

• Surface emission.

Comments

1. For these particles, it is usual the use of the product of diffusivity and concentration in equilibrium to indicate the flux:  C0relEq_? · Dm_?. When one of this parameters is modified, the other should me properly changed in order to maintain the results, at least at annealing temperatures.

2. This prefactor affects also, as a consequence, to the prefactor emission of charged species and to the prefactor emission of impurity-"native defect" pairs.

3. Generation of single neutral "native defects" in the volume is not implemented in DADOS, as its frequency is extemely low.