Particles

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DADOS name Definition Material
Single neutral "native defects"
I Neutral interstitial Silicon
V Neutral vacancy Silicon
Charged "native defects"
IP Positive interstitial Silicon
IM Negative interstitial Silicon
VP Positive vacancy Silicon
VPP Doubly positive vacancy Silicon
VM Negative vacancy Silicon
VMM Doubly negative vacancy Silicon
Single impurities
O Oxygen Silicon
C Carbon Silicon
B Negative boron Silicon
F Fluorine Silicon
H Hydrogen Silicon
In Negative indium Silicon
As Positive arsenic Silicon
Ph Positive phosphorous Silicon
Sb Positive antimony Silicon
Impurity-"native defect" pairs
Ci Interstitial-carbon Silicon
Bi Neutral interstitial-boron Silicon
BiP Positive interstitial-boron Silicon
BiM Negative interstitial-boron Silicon
InV Neutral vacancy-indium Silicon
InVM Negative vacancy-indium Silicon
Ini Neutral interstitial-indium Silicon
IniM Negative interstitial-indium Silicon
AsV Neutral vacancy-arsenic Silicon
AsVP Positive vacancy-arsenic Silicon
AsVM Negative vacancy-arsenic Silicon
Asi Neutral interstitial-arsenic Silicon
AsiP Positive interstitial-arsenic Silicon
PhV Neutral vacancy-phosphorous Silicon
PhVP Positive vacancy-phosphorous Silicon
PhVM Negative vacancy-phosphorous Silicon
Phi Neutral interstitial-phosphorous Silicon
PhiP Positive interstitial-phosphorous Silicon
Impurities in other materials
AsAmorphousSi Arsenic in amorphous Amorphous silicon
AsNitride Arsenic in nitride Silicon nitride
AsOxide Arsenic in oxide Silicon oxide
BAmorphousSi Boron in amorphous Amorphous silicon
BNitride Boron in nitride Silicon nitride
BOxide Boron in oxide Silicon oxide
PhAmorphousSi Phosphorous in amorphous Amorphous silicon
PhNitride Phosphorous in nitride Silicon nitride
PhOxide Phosphorous in oxide Silicon oxide

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