Csol0_?

Definition

Prefactor of solubility [1].

Interrogation mark (?) indicates the particle for which the parameter is defined, for instance, Csol0_As is used for calculate solubility in arsenic.

Involved particles

• Single impurities.

• Impurities-"native defect" pairs.

• Impurities in other materials.

Units

Particles per square centimeter (cm^-2).

Related physical magnitudes

• Solubility.

Related DADOS mechanisms

• Emission from surface.

• Trapping.

Comments

1. We only consider electrical (substitutional) solubility.

2. Set this parameter to its negative value to simulate impurity in-diffusion into the silicon side.

 

Esol_?

Definition

Solubility energy [1].

Interrogation mark (?) indicates the particle for which the parameter is defined, for instance, Esol_As is used for calculate solubility in arsenic.

Involved particles

• Single impurities.

• Impurities-"native defect" pairs.

• Impurities in other materials.

Units

Electron-volts (eV).

Related physical magnitudes

• Solubility.

Related DADOS mechanisms

• Emission from surface.

• Trapping.

Comments

1. We only consider electrical (substitutional) solubility.

 

Surf_h0_?

Definition

Prefactor of coefficient "h", which is related to the trapping.

Interrogation mark (?) indicates the particle for which the parameter is defined, for instance, Surf_h0_B is used for boron.

Involved particles

• Single impurities.

• Impurities-"native defect" pairs.

• Impurities in other materials.

Units

Centimeters per second (cm/s).

Related DADOS mechanisms

• Emission from surface.

• Trapping.

Comments

1. Set this parameter to zero to simulate impurity mirror interface.

Surf_Eh_?

Definition

Energy of coefficient "h", which is related to the trapping.

Interrogation mark (?) indicates the particle for which the parameter is defined, for instance, Surf_Eh_B is used for boron.

Involved particles

• Single impurities.

• Impurities-"native defect" pairs.

• Impurities in other materials.

Units

Electron-volts (eV).

Related DADOS mechanisms

• Emission from surface.

• Trapping.

Surf_e_a0_?

Definition

Prefactor of the ratio of emission to absorption probabilities for the interface.

Interrogation mark (?) indicates the particle for which the parameter is defined, for instance, Surf_e_a0_B is used for boron.

Involved particles

• Single impurities.

• Impurities-"native defect" pairs.

• Impurities in other materials.

Units

Dimensionless.

Related DADOS mechanisms

• Emission from surface.

• Trapping.

Surf_Ee_a_?

Definition

Energy of the relation between emission and absorption probabilities for the interface.

Interrogation mark (?) indicates the particle for which the parameter is defined, for instance, Surf_Ee_a_B is used for boron.

Involved particles

• Single impurities.

• Impurities-"native defect" pairs.

• Impurities in other materials.

Units

Electron-volts (eV).

Related DADOS mechanisms

• Emission from surface.

• Trapping.

SurfMaxTrap_?

Definition

Maximum concentration of trapped particles allowed at the interface side indicated by "?", for instance, SurfMaxTrap_B is used for boron.

Involved particles

• Single impurities.

• Impurities-"native defect" pairs.

• Impurities in other materials.

Units

Particles per square centimeter (cm^-2).

Related DADOS mechanisms

• Emission from surface.

• Trapping.

 

Segreg_pref_?

Definition

Prefactor of the segregation coefficient.

Interrogation mark (?) indicates the particle for which the parameter is defined, for instance, Segreg_pref_BOxide is used for boron in oxide silicon.

Involved particles

• Single impurities.

• Impurities-"native defect" pairs.

• Impurities in other materials.

Units

Dimensionless.

Related DADOS mechanisms

• Segregation.

• Trapping.

Segreg_eV_?

Definition

Segregation energy.

Interrogation mark (?) indicates the particle for which the parameter is defined, for instance, Segreg_eV_BOxide is used for boron in oxide silicon.

Involved particles

• Single impurities.

• Impurities-"native defect" pairs.

• Impurities in other materials.

Units

Electron-volts (eV).

Related DADOS mechanisms

• Segregation.

• Trapping.

RecLnm_?

Definition

Recombination length for the interface shown in "?", for instance, RecLnm_IOxide is used for interstitials in oxide silicon.

Involved particles

Single neutral native defects.

Units

Nanometers (nm).

Related physical magnitudes

• Recombination length.

DADOS mechanisms

• Surface recombination.

Comments

1. Recombination of single neutral native defects in the volume is not implemented in UVAS, as its frequency is extremely low.

SuperSat_?

Definition

Interstitial or vacancy supersaturation in the material indicated by "?". For example: SuperSat_V is the vacancy supersaturation in oxide silicon.

Involved particles

Single neutral native defects.

Units

Dimensionless.

Related physical magnitudes

• Supersaturation.

Comments

1. This value is used by DADOS to initialize, as it will change during the simulation.