Eg0Eg0Definition
Silicon band gap witdh at 0 K.
Units
Electron-volts (eV).
Related physical magnitudes
Related DADOS mechanisms
AgapDefinition
Constant used for band gap width calculation (see temperature dependance of band structure).
Units
Electron-volts per kelvin (eV/K).
Related DADOS mechanisms
BgapDefinition
Constant used for band gap width calculation (see ttemperature dependance of band structure).
Units
Kelvin (K).
Related DADOS mechanisms
Nc300Definition
Effective density of states of the conduction band at 300 K.
Units
States per cubic centimeter (cm-3).
Related physical magnitudes
Related DADOS mechanisms
Nv300Definition
States density in the valence band at 300 K.
Units
States per cubic centimeter (cm-3).
Related physical magnitudes
Related DADOS mechanisms
expNcDefinition
Exponent used to calculate the states density in the conduction band.
Units
Dimensionless.
Related physical magnitudes
Related DADOS mechanisms
expNvDefinition
Exponent used to calculate the states density in the conduction band.
Units
Dimensionless.
Related physical magnitudes
Related DADOS mechanisms
A??1_?Definition
Parameters used to calculate carrier-related band gap narrowing (see band gap narrowing).
Interrogation marks (?) are used to indicate the use of this set of parameters in different expressions. For instance: Acp1_3 is used for the conduction band (c) in a p-semiconductor (p); last value (3) is used used as a denominator in exponents in the band gap calculation.
Units
Dimensionless.
Related DADOS mechanisms