V0recryst

Definition

Prefactor of recrystallization velocity.

Units

Centimeters per second (cm/s).

Related DADOS mechanisms

• Recrystallization.

Erecryst

Definition

Activation energy for the recrystallization.

Units

Electron-volts (eV).

Related DADOS mechanisms

• Recrystallization.

recrysDepositProb_?

Definition

Probability that an impurity stays as a substitutional structure in an amorphous box which is going to recrystallize instead or being transferred into another amorphous box following the direction indicated by the recrystallization front.

Interrogation mark (?) is used to indicate the particle for which the parameter is defined, for instance, recrysDepositProb_As is the probability for arsenic.

Involved particles

• Single impurities.

Units

Dimensionless.

Related DADOS mechanisms

• Recrystallization.

recrysMaxActive_?

Definition

Maximum concentration of active impurities that can be deposited as complexes in an amorphous box which has recrystallized.

Interrogation mark (?) is used to indicate the particle for which the parameter is defined, for instance, recrysMaxActive_As is the maximum concentration of arsenic.

Involved particles

• Impurities in amorphous regions.

• Single impurities.

Units

Particles per cubic centimeters (cm^-3).

Related DADOS mechanisms

• Recrystallization.

 

maxDepositedCxSize_?

Definition

Maximum number of atoms that can be included in a complex created from impurities deposit in an amorphous box which has recrystallized.

Interrogation mark (?) is used to indicate the particle for which the parameter is defined, for instance, maxDepositedCxSize_As is the maximum number of arsenic atoms in a complex in the recrystallization process.

Involved particles

• Single impurities.

Units

Dimensionless.

Related DADOS mechanisms

• Recrystallization.

 

inRelDamChange

Definition

When the damage profile has been modified in a percentage indicated by this parameter, an update will take place.

Units

Dimensionless

Related DADOS mechanisms

• Amorphization.

AmorphizationThreshold

Definition

Minimum level of interstitials plus vacancies concentration to consider a region to be amorphous. These particles can be point defects or belong to an amorphous pocket.

Units

Particles per cubic centimeter (cm^-3).

Related DADOS mechanisms

• Amorphization.

 

MaxIVStorage

Definition

Maximum level of interstitials plus vacancies concentration to store each particle's coordinates in memory. From this level, DADOS will only count the number of particles (Rubio et al. 2004).

Units

Particles per cubic centimeter (cm^-3).

Related DADOS mechanisms

• Amorphization.

Comments

1. Obviously, if resources saving is wanted, MaxIVStorage must be lower than AmorphizationThreshold, due to the fact that over this concentration, silicon is transformed into amorphous silicon and no particles are stored for this material.

2. If the concentration is too low, DADOS will convert it into the minimum value, with is the equivalent to one particle per box size.

 

LatticeCollapse_nm3

Definition

If a silicon region is surrounded by amorphous silicon and its volume is equal or lower than the one indicated by this parameter, it will amorphize. This avoids to have small non-amorphous regions which are a source of recrystallization.

Units

Cubic nanometers (nm³).

Related DADOS mechanisms

• Amorphization.

ExponentAmorphousPocket

Definition

Exponent used for the activation energy calculation.

Units

Dimensionless.

Related DADOS mechanisms

• Amorphous pocket implementation.

D0AmorphousPocket

Definition

Proportional to the prefactor of dynamic annealing for amorphous pockets.

Units

Square centimeters per second (cm²/s).

Related DADOS mechanisms

• Amorphous pocket implementation.

Eb_AmorphousPocket

Definition

Activation energy for dynamic annealing in amorphous pockets.

Units

Electron-volts (eV).

Related DADOS mechanisms

• Amorphous pocket implementation.