Department of Electronics. University of Valladolid

Binary Collision Approximation

Ion Implant Simulator (IIS)

Ion Implant Simulator based on Binary Collision Approximation (BCA)s. web

Publications

· Hernandez-Mangas,-JM; Arias,-J; Marques,-LA; Ruiz-Bueno,-A; Bailon,-L.
Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon
Nucl. Instr. Meth. B 228 (2005) p.235-9.

· Hernandez-Mangas-JM; Lazaro-J, ; Enriquez-L; Bailon-L. ; Barbolla-J.; Jaraiz-M
Statistical 3D damage accumulation model for ion implant simulators.
Nucl. Instr. Meth. B 202 (2003) p.138-142. pdf (192KB)

· Hernandez-Mangas-JM; Arias-J; Bailon-L; Jaraiz-M; Barbolla-J.
Improved binary collision approximation ion implant simulators.
J. Appl. Phys. 91 (2002) p.658-667. pdf (180KB)

· Hernandez-Mangas-JM; Enriquez-L; Arias-J; Jaraiz-M; Bailon-L.
Enhanced modelization of ion implant simulation in compound semiconductors.
Solid State Electronics 46 (2002) p.1315-1324. pdf (294KB)

· Hernandez-Mangas-JM; Arias-J; Jaraiz-M; Bailon-L; Barbolla-J.
Algorithm for statistical noise reduction in three-dimensional ion implant simulations.
Nucl. Instr. Meth. B 174 (2001) p.433-8. pdf (179KB)

· Hernandez-Mangas-JM.
Simulacion BCA de la Implantacion ionica en materiales cristalinos: mejora de los modelos fisicos y del tiempo de calculo.
Ph.D. Thesis. University of Valladolid, Spain (2000). pdf HTML

· Arias-J; Jaraiz-M; Pelaz-L; Bailon-LA; Barbolla-J.
Low energy ion implantation simulation using a modified binary collision approximation code.
Nucl. Instr. Meth. B 102 (1995) p.228-31.

· Jaraiz-M; Gilmer-GH; Stock-DM; Diaz-de-la-Rubia-T.
Defects from implantation in silicon by linked Marlowe-molecular dynamics calculations.
Nucl. Instr. Meth. B 102 (1995) p.180-2.

· Arias-J; Jaraiz-M; Rubio-JE; Pelaz-L; Marques-LA; Barbolla-J.
Detailed computer simulation of ion implantation processes into crystals.
Mat. Sci. Technol. 11 (1995) p.1191-3.

· Jaraiz-M; Arias-J; Rubio-JE; Bailon-LA; Barbolla-J.
Computer simulation of point-defect distributions generated by ion implantation.
Nucl. Instr. Meth. B 80-81 (1993) p.172-5

· Jaraiz-M; Arias-J; Bailon-LA; Barbolla-JJ.
Detailed computer simulation of damage accumulation in ion irradiated crystalline targets.
Vacuum 44 (1993) p.321-3

Contacts

· Jesus Manuel Hernandez-Mangas.

· Luis A Bailon.

· Jesus Arias.

· Martin Jaraiz.

Home Page of Atomistic Process Simulation at e-UVA