process modeling, a kinetic
Compared to standard Continuum Process Simulators, the advantages of atomistic KMC Process Simulators are:
· Direct relation to microscopic data (from ab-initio or from experiments)
· Multiple mechanisms are included simultaneously with no simulation-time cost
· No convergence problems (there are no equations)
· Intrinsically three-dimensional.
· Specially efficient when dimensions shrink
· Highly non-equilibrium conditions are not an issue.
· Discrete character of dopants (local inhomogeneities).
· No topology problems with moving boundaries.
· Capture cross sections of extended defects directly given by the geometry.
· Intuitive view of the microstructure (easy comparison to TEM micrographs).
DADOS (Diffusion of Atomistic Defects Object-oriented Simulator) is the atomistic KMC Process Simulator developed by Martin Jaraiz and coworkers at the Department of Electronics of the University of Valladolid. It is suitable for the simulation of front-end processes in advanced, deep-submicron Silicon-based technologies. DADOS can be used either as a research or a TCAD tool.
· For research purposes, DADOS is used as the engine of UVAS (University of Valladolid Atomistic Simulator), a simulation enviroment (running under MS-Windows) that controls DADOS and allows the extraction of simulation results.
Snapshot of the UVAS-DADOS enviroment
A Help system (under MS-Windows) for the KMC simulator DADOS, using the UVAS interface, can be downloaded here. For proper functioning, you have to download it on your hard disk (and “unblock it” in Properties/General: Unblock), not to execute on the web.
Front page of UVAS-DADOS Help
A tutorial, using representative examples, has been also developed and can be used on-line, clicking here.
· Ruth Pinacho.